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"High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base ..."

Akio Wakejima et al. (2007)

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DOI: 10.1093/IETELE/E90-C.5.929

access: closed

type: Journal Article

metadata version: 2023-09-30

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  - https://dblp.org/rec/journals/ieicet/WakejimaMANOOKTM07
Akio Wakejima, Kohji Matsunaga, Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Naotaka Kuroda, Masahiro Tanomura, Hironobu Miyamoto:
High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations. IEICE Trans. Electron. 90-C(5): 929-936 (2007)

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