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"Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on ..."

Mathieu Stoffel, Jing Zhang, Oliver G. Schmidt (2006)

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DOI: 10.1093/IETELE/E89-C.7.921

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/StoffelZS06
Mathieu Stoffel, Jing Zhang, Oliver G. Schmidt:
Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si_0.7Ge_0.3 Virtual Substrates. IEICE Trans. Electron. 89-C(7): 921-925 (2006)

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