"Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T ..."

Sangheon Oh, Changhwan Shin (2016)

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DOI: 10.1587/TRANSELE.E99.C.541

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type: Journal Article

metadata version: 2020-04-11

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Sangheon Oh, Changhwan Shin:
Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method. IEICE Trans. Electron. 99-C(5): 541-543 (2016)

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