"Electrical Characterization of Aluminum-Oxynitride Stacked Gate ..."

Hideki Murakami et al. (2005)

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DOI: 10.1093/IETELE/E88-C.4.640

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type: Journal Article

metadata version: 2020-04-11

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Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki:
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation. IEICE Trans. Electron. 88-C(4): 640-645 (2005)

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