"Bias Polarity Dependent Resistive Switching Behaviors in Silicon ..."

Sungjun Kim et al. (2016)

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DOI: 10.1587/TRANSELE.E99.C.547

access: closed

type: Journal Article

metadata version: 2020-04-11

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Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Trans. Electron. 99-C(5): 547-550 (2016)

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