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"Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors ..."
Norihide Kashio et al. (2016)
- Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki:
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage. IEICE Trans. Electron. 99-C(5): 522-527 (2016)
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