"High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for ..."

Kouji Ishikura et al. (2007)

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DOI: 10.1093/IETELE/E90-C.5.923

access: closed

type: Journal Article

metadata version: 2020-04-11

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Kouji Ishikura, Isao Takenaka, Hidemasa Takahashi, Kouichi Hasegawa, Kazunori Asano, Naotaka Iwata:
High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station. IEICE Trans. Electron. 90-C(5): 923-928 (2007)

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