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"Device Design of Nanoscale MOSFETs Considering the Suppression of Short ..."

Toshiro Hiramoto et al. (2007)

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DOI: 10.1093/IETELE/E90-C.4.836

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/HiramotoNOY07
Toshiro Hiramoto, Toshiharu Nagumo, Tetsu Ohtou, Kouki Yokoyama:
Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations. IEICE Trans. Electron. 90-C(4): 836-841 (2007)

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