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"Influence of Si Surface Roughness on Electrical Characteristics of MOSFET ..."

Dae-Hee Han et al. (2014)

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DOI: 10.1587/TRANSELE.E97.C.413

access: closed

type: Journal Article

metadata version: 2020-04-11

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  dblp key:
  - journals/ieicet/HanOSGO14
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/HanOSGO14
Dae-Hee Han, Shun'ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, Tadahiro Ohmi:
Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering. IEICE Trans. Electron. 97-C(5): 413-418 (2014)

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