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"Temperature-Independent Hole Mobility in Field-Effect Transistors Based on ..."

Masahiro Funahashi, Fapei Zhang, Nobuyuki Tamaoki (2011)

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DOI: 10.1587/TRANSELE.E94.C.1720

access: closed

type: Journal Article

metadata version: 2023-11-12

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  - https://dblp.org/rec/journals/ieicet/FunahashiZT11
Masahiro Funahashi, Fapei Zhang, Nobuyuki Tamaoki:
Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors. IEICE Trans. Electron. 94-C(11): 1720-1726 (2011)

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