"Stress Effect Analysis for PD SOI pMOSFETs with ..."

Sang-Sik Choi et al. (2008)

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DOI: 10.1093/IETELE/E91-C.5.716

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/ChoiCKYHHCS08
Sang-Sik Choi, A-Ram Choi, Jae-Yeon Kim, Jeon-Wook Yang, Yong-Woo Hwang, Tae-Hyun Han, Deok Ho Cho, Kyu-Hwan Shim:
Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si_0.88Ge_0.12 Heterostructure Channel. IEICE Trans. Electron. 91-C(5): 716-720 (2008)

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