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"A lateral DMOS with partial buried-oxide layer to achieve better RESURF ..."

Chunwei Zhang et al. (2014)

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DOI: 10.1587/ELEX.11.20140055

access: open

type: Journal Article

metadata version: 2023-06-27

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  dblp key:
  - journals/ieiceee/ZhangLSYS14
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  - https://dblp.org/rec/journals/ieiceee/ZhangLSYS14
Chunwei Zhang, Siyang Liu, Daying Sun, Chaohui Yu, Weifeng Sun:
A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect. IEICE Electron. Express 11(6): 20140055 (2014)

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