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ORCID"A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing ..."
Shusuke Yoshimoto et al. (2012)
- Shusuke Yoshimoto
, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto:
A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing Technique. IEICE Electron. Express 9(12): 1023-1029 (2012)
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