"Monolithic integration of gate driver and p-GaN power HEMT for ..."

Yuki Yamashita et al. (2019)

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DOI: 10.1587/ELEX.16.20190516

access: open

type: Journal Article

metadata version: 2022-10-02

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  - https://dblp.org/rec/journals/ieiceee/YamashitaSPGLFD19
Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi:
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express 16(22): 20190516 (2019)

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