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"Atomistic study of SiN based ReRAM with high program/erase cycle endurance."

Keita Yamaguchi, Hiroki Shirakawa, Kenji Shiraishi (2018)

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DOI: 10.1587/ELEX.15.20180868

access: open

type: Journal Article

metadata version: 2021-02-12

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  - electronic edition via DOI (open access)
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  dblp key:
  - journals/ieiceee/YamaguchiSS18
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  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/YamaguchiSS18
Keita Yamaguchi, Hiroki Shirakawa, Kenji Shiraishi:
Atomistic study of SiN based ReRAM with high program/erase cycle endurance. IEICE Electron. Express 15(23): 20180868 (2018)

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