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"Improved stability in wide-recess InP HEMTs by means of a fully passivated ..."

Tetsuya Suemitsu et al. (2006)

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DOI: 10.1587/ELEX.3.310

access: open

type: Journal Article

metadata version: 2024-05-07

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  - journals/ieiceee/SuemitsuFTRMZ06
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  - https://dblp.org/rec/journals/ieiceee/SuemitsuFTRMZ06
Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni:
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electron. Express 3(13): 310-315 (2006)

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