"Channel thickness dependence on InGaAs MOSFET with n-InP source for high ..."

Kazuto Ohsawa et al. (2014)

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DOI: 10.1587/ELEX.11.20140567

access: open

type: Journal Article

metadata version: 2021-02-12

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Kazuto Ohsawa, Atsushi Kato, Toru Kanazawa, Eiji Uehara, Yasuyuki Miyamoto:
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density. IEICE Electron. Express 11(14): 20140567 (2014)

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