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"Investigation of endurance degradation for 3-D charge trap NAND flash ..."

Jongwoo Kim et al. (2022)

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DOI: 10.1587/ELEX.19.20220465

access: open

type: Journal Article

metadata version: 2023-02-15

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  dblp key:
  - journals/ieiceee/KimJCSSS22
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  - https://dblp.org/rec/journals/ieiceee/KimJCSSS22
Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin:
Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide. IEICE Electron. Express 19(24): 20220465 (2022)

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