"Hafnium-nitride gate insulator formed by electron-cyclotron-resonance ..."

Huiseong Han, Shun'ichiro Ohmi (2012)

> Home

Details and statistics

DOI: 10.1587/ELEX.9.1329

access: open

type: Journal Article

metadata version: 2021-02-12

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/HanO12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/HanO12
Huiseong Han, Shun'ichiro Ohmi:
Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering. IEICE Electron. Express 9(16): 1329-1334 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.