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"Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics."

Kenneth A. Ellis, Robert A. Buhrman (1999)

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DOI: 10.1147/RD.433.0287

access: closed

type: Journal Article

metadata version: 2020-03-13

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  - journals/ibmrd/EllisB99
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  - https://dblp.org/rec/journals/ibmrd/EllisB99
Kenneth A. Ellis, Robert A. Buhrman:
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics. IBM J. Res. Dev. 43(3): 287-300 (1999)

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