"Design and characteristics of n-channel insulated-gate field-effect ..."

Dale L. Critchlow, Robert H. Dennard, Stanley Schuster (2000)

> Home

Details and statistics

DOI: 10.1147/RD.441.0070

access: closed

type: Journal Article

metadata version: 2020-03-13

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ibmrd/CritchlowDS00
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ibmrd/CritchlowDS00
Dale L. Critchlow, Robert H. Dennard, Stanley Schuster:
Design and characteristics of n-channel insulated-gate field-effect transistors. IBM J. Res. Dev. 44(1): 70-83 (2000)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.