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"A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets."
Yuanqing Li et al. (2016)
- Yuanqing Li, Lixiang Li, Yuan Ma, Li Chen
, Rui Liu, Haibin Wang, Qiong Wu, Michael Newton, Mo Chen:
A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets. J. Electron. Test. 32(2): 137-145 (2016)
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