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"Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage ..."

Abhishek Bhattacharjee et al. (2022)

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DOI: 10.1007/S10836-022-05990-4

access: closed

type: Journal Article

metadata version: 2022-10-02

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  - journals/et/BhattacharjeeND22
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  - https://dblp.org/rec/journals/et/BhattacharjeeND22
Abhishek Bhattacharjee, Abhishek Nag, Kaushik Das, Sambhu Nath Pradhan:
Design of Power Gated SRAM Cell for Reducing the NBTI Effect and Leakage Power Dissipation During the Hold Operation. J. Electron. Test. 38(1): 91-105 (2022)

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