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"Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors."
Hongtao Zhong et al. (2022)
- Hongtao Zhong, Zijie Zheng, Kai Ni, Xiao Gong, Huazhong Yang, Xueqing Li:
Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors. CoRR abs/2212.04973 (2022)
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