"Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) ..."

Olha I. Tkachuk et al. (2016)

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DOI: 10.3390/COMPUTATION4010014

access: open

type: Journal Article

metadata version: 2020-10-01

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Olha I. Tkachuk, Maria I. Terebinskaya, Victor V. Lobanov, Alexei V. Arbuznikov:
Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) Surface Layer on Semicore One-Electron States. Comput. 4(1): 14 (2016)

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