"Short-channel effects on the static noise margin of 6T SRAM composed of 2D ..."

Qian Xie et al. (2019)

> Home

Details and statistics

DOI: 10.1007/S11432-018-9429-2

access: closed

type: Journal Article

metadata version: 2023-02-08

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/XieCLXW19
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/XieCLXW19
Qian Xie, Chen Chen, Mingjun Liu, Shuang Xia, Zheng Wang:
Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci. China Inf. Sci. 62(6): 62404:1-62404:8 (2019)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.