"Improvements on voltage-resistant performance of bipolar static induction ..."

YongShun Wang et al. (2012)

> Home

Details and statistics

DOI: 10.1007/S11432-011-4523-1

access: closed

type: Journal Article

metadata version: 2020-03-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/chinaf/WangFLWWZ12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/chinaf/WangFLWWZ12
YongShun Wang, JingJing Feng, ChunJuan Liu, Ziting Wang, ZaiXing Wang, Caizhen Zhang:
Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure. Sci. China Inf. Sci. 55(4): 962-970 (2012)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.