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"Single-event-transient effects in silicon-on-insulator ferroelectric ..."

Guoliang Tian et al. (2020)

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DOI: 10.1007/S11432-019-2716-5

access: closed

type: Journal Article

metadata version: 2023-01-05

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  - https://dblp.org/rec/journals/chinaf/TianBXXYMYXW20
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020)

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