"Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high ..."

Lingjie Qin et al. (2025)

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DOI: 10.1007/S11432-024-4268-5

access: closed

type: Journal Article

metadata version: 2025-06-15

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Lingjie Qin, Jiejie Zhu, Bowen Zhang, Yuxi Zhou, Huantao Duan, Huimei Ma, Mengdi Li, Simei Huang, Jin Rao, Xiaohua Ma, Yue Hao:
Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG. Sci. China Inf. Sci. 68(3) (2025)

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