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ORCID"Effective gate length model for asymmetrical gate-all-around silicon ..."
Xiaoqiao Dong et al. (2020)
- Xiaoqiao Dong, Ming Li, Wanrong Zhang, Yuancheng Yang, Gong Chen, Shuang Sun, Jianing Wang, Xiaoyan Xu, Xia An:
Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors. Sci. China Inf. Sci. 63(10): 1-3 (2020)
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