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ORCID"Improved empirical DC I-V model for 4H-SiC MESFETs."
QuanJun Cao et al. (2008)
- QuanJun Cao, Yimen Zhang, Yuming Zhang, HongLiang Lv, YueHu Wang, XiaoYan Tang, Hui Guo:
Improved empirical DC I-V model for 4H-SiC MESFETs. Sci. China Ser. F Inf. Sci. 51(8): 1184-1192 (2008)
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