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"Application of long short-term memory modeling technique to predict ..."

Rajat Butola et al. (2023)

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DOI: 10.1016/J.COMPELECENG.2022.108554

access: closed

type: Journal Article

metadata version: 2023-04-29

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Rajat Butola, Yiming Li, Sekhar Reddy Kola, Chandni Akbar, Min-Hui Chuang:
Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors. Comput. Electr. Eng. 105: 108554 (2023)

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