"The influence of dependence of HEMT's model parameters on gate and drain ..."

A. M. Bobreshov, L. I. Averina, A. I. Lopatin (2002)

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DOI: 10.1016/S0045-7906(01)00006-4

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type: Journal Article

metadata version: 2020-02-19

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A. M. Bobreshov, L. I. Averina, A. I. Lopatin:
The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity. Comput. Electr. Eng. 28(6): 643-648 (2002)

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