"Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN ..."

Qing Zhu et al. (2020)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2020.2975118

access: open

type: Journal Article

metadata version: 2025-05-02

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/ZhuMHWZYZH20
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/ZhuMHWZYZH20
Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao:
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8: 35520-35528 (2020)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.