"Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET ..."

Shubham Sahay, Mamidala Jagadesh Kumar (2017)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2017.2751518

access: open

type: Journal Article

metadata version: 2021-10-14

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/SahayK17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/SahayK17
Shubham Sahay, Mamidala Jagadesh Kumar:
Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs. IEEE Access 5: 18918-18926 (2017)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.