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"GaN Transistors' Radiated Switching Noise Source Evidenced by Hall ..."

Vlad Marsic et al. (2024)

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DOI: 10.1109/ACCESS.2024.3357239

access: open

type: Journal Article

metadata version: 2024-02-29

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Vlad Marsic, Soroush Faramehr, Joe Fleming, Rohit Bhagat, Petar Igic:
GaN Transistors' Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration. IEEE Access 12: 13783-13794 (2024)

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