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"A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs."

Yonghao Jia et al. (2019)

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DOI: 10.1109/ACCESS.2019.2937545

access: open

type: Journal Article

metadata version: 2021-10-14

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  - https://dblp.org/rec/journals/access/JiaWCXGX19
Yonghao Jia, Zhang Wen, Yongbo Chen, Cheng-Cheng Xie, Yong-Xin Guo, Yuehang Xu:
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs. IEEE Access 7: 120638-120647 (2019)

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