"Comprehensive Analysis of Source and Drain Recess Depth Variations on ..."

Jinsu Jeong et al. (2020)

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DOI: 10.1109/ACCESS.2020.2975017

access: open

type: Journal Article

metadata version: 2020-03-19

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Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek:
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application. IEEE Access 8: 35873-35881 (2020)

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