"Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced ..."

Kyoung Min Choi, Jae Seung Woo, Woo Young Choi (2025)

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DOI: 10.1109/ACCESS.2025.3602436

access: open

type: Journal Article

metadata version: 2025-10-15

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Kyoung Min Choi, Jae Seung Woo, Woo Young Choi:
Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes. IEEE Access 13: 150517-150522 (2025)

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