"Design of Enhancement Mode β-Ga₂O₃ Vertical Current ..."

Xiaoqing Chen, Feng Li, Herbert Hess (2024)

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DOI: 10.1109/ACCESS.2024.3377563

access: open

type: Journal Article

metadata version: 2024-04-15

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Xiaoqing Chen, Feng Li, Herbert Hess:
Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate. IEEE Access 12: 42791-42801 (2024)

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