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"Oxynitride gate dielectric prepared by thermal oxidation of low-pressure ..."

Jackie Chan et al. (2003)

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DOI: 10.1016/S0026-2714(03)00031-3

access: closed

type: Journal Article

metadata version: 2020-02-22

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Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok:
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. Microelectron. Reliab. 43(4): 611-616 (2003)

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