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"Design and Analysis of Novel InSb/Si Heterojunction Double Gate Tunnel ..."

S. Ahish et al. (2016)

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DOI: 10.1109/ISVLSI.2016.52

access: closed

type: Conference or Workshop Paper

metadata version: 2023-03-24

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S. Ahish, Dheeraj Sharma, M. H. Vasantha, Kumar Y. B. Nithin:
Design and Analysis of Novel InSb/Si Heterojunction Double Gate Tunnel Field Effect Transistor. ISVLSI 2016: 105-109

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