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"2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and ..."

Junlei Zhao et al. (2017)

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DOI: 10.1109/ISSCC.2017.7870251

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Junlei Zhao, Elham Rahimi, Francesco Svelto, Andrea Mazzanti:
2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage. ISSCC 2017: 42-43

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