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"Design of an oscillator in a 0.25 μm GaN-on-SiC HEMT technology for ..."

Hang Liu et al. (2017)

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DOI: 10.1109/ISCIT.2017.8261204

access: closed

type: Conference or Workshop Paper

metadata version: 2018-10-18

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  dblp key:
  - conf/iscit/LiuZBZ17
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Hang Liu, Jin Bao Zhu, Meriam Gay Bautista, Yi Zhong:
Design of an oscillator in a 0.25 μm GaN-on-SiC HEMT technology for long range remote sensing applications. ISCIT 2017: 1-4

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