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"Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive ..."

Zuopu Zhou et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830291

access: closed

type: Conference or Workshop Paper

metadata version: 2024-01-03

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Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong:
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention. VLSI Technology and Circuits 2022: 357-358

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