Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL ..."

Zuopu Zhou et al. (2023)

> Home

Details and statistics

DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185243

access: closed

type: Conference or Workshop Paper

metadata version: 2023-12-19

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/ZhouJKZHCSNG23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/ZhouJKZHCSNG23
Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong:
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F² High-Density Integration. VLSI Technology and Circuits 2023: 1-2

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.