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ORCID"Record High Active Boron Doping using Low Temperature In-situ CVD: ..."
Gerui Zheng et al. (2023)
- Gerui Zheng, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong:
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature. VLSI Technology and Circuits 2023: 1-2
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