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"Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM ..."
Shanshan Xie et al. (2022)
- Shanshan Xie, Can Ni, Pulkit Jain, Fatih Hamzaoglu, Jaydeep P. Kulkarni:
Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs. VLSI Technology and Circuits 2022: 112-113
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