"3DIC with Stacked FinFET, Inter-Level Metal, and Field-Size ..."

Bo-Jheng Shih et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631506

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Bo-Jheng Shih, Yu-Ming Pan, Hao-Tung Chung, Chieh-Ling Lee, I-Chun Hsieh, Nein-Chih Lin, Chih-Chao Yang, Po-Tsang Huang, Hung-Ming Chen, Chiao-Yen Wang, Huan-Yu Chiu, Huang-Chung Cheng, Chang-Hong Shen, Wen-Fa Wu, Tuo-Hung Hou, Kuan-Neng Chen, Chenming Hu:
3DIC with Stacked FinFET, Inter-Level Metal, and Field-Size (25×33mm²) Single-Crystalline Si on SiO2 by Elevated-Epi. VLSI Technology and Circuits 2024: 1-2

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