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"On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 ..."

Nirmaan Shanker et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830440

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-16

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Nirmaan Shanker, Li-Chen Wang, Suraj S. Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef S. Salahuddin:
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs. VLSI Technology and Circuits 2022: 421-422

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